c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . SBP13003D SBP13003D SBP13003D SBP13003D rev.a aug.2010 high voltage fast -switching npn power transistor features ? very high switching speed ? high voltage capability ? wide reverse bias soa ? built-in free wheeling diode general description this device is designed for high voltage ,high speed switching characteristics required such as lighting system,switching mode power supply. absolute maximum ratings symbol parameter test conditions value units v ces collector-emitter voltage v be =0 700 v v ceo collector-emitter voltage i b =0 400 v v ebo emitter-base voltage i c =0 9.0 v i c collector current 1.5 a i cp collector pulse current 3.0 a i b base current 0.75 a i bm base peak current t p =5ms 1.5 a p c total dissipation at tc*=25 40 w total dissipation at ta*=25 1.2 t j operation junction temperature -40~150 t stg storage temperature -40~150 tc :case temperature (good cooling) ta :ambient temperature (without heat sink) thermal characteristics symbol parameter value units r ? jc thermal resistance junction to case 3.12 /w r ? ja thermal resistance junction to ambient 8.9 /w 1.base 2.collector 3.emitter symbol symbol symbol symbol
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance SBP13003D SBP13003D SBP13003D SBP13003D 2 / 5 electrical characteristics (tc=25 unless otherwise noted) symbol parameter test conditions value units min typ max i ebo emitter cut-off current v be =9v - - 20 a v ceo(sus) collector-emitter sustaining voltage i b =0,i c =10ma 400 - - v v ce(sat) collector -emitter saturation voltage i c =1.0a,i b =0.2a i c =2.0a,i b =0.5a i c =4.0a,i b =1.0a - - 0.5 0.6 1.0 v v be(sat) base -emitter saturation voltage i c =1.0a,i b =0.2a i c =2.0a,i b =0.5a - - 1.2 1.6 v hfe dc current gain i c =500a,v ce =5v i c =1ma,v ce =5v 10 9 - 40 - ts tf storage time fall time i c =0.5a,v cc =5v (ui9600a) - - 4 0.8 s f t current gain bandwidth product i c =0.5a,v ce =10v 4 - - mhz v f diode forward voltage i f =2a - - 2 v c ob output capacitance i c =0.5a,v cb =10v - 21 pf note: pulse test :pulse width 300, duty cycle 2%
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance SBP13003D SBP13003D SBP13003D SBP13003D 3 / 5 fig.1 dc current gain fig.2 saturation voltage fig.3 safe operation fig.4 power derating
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance SBP13003D SBP13003D SBP13003D SBP13003D 4 / 5 resistive load switching test circuit inductive load switching & rbsoa test circuit
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance SBP13003D SBP13003D SBP13003D SBP13003D 5 / 5 to-220 to-220 to-220 to-220 package package package package dimension dimension dimension dimension unit:mm
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